材料哲学博士-电子和光子材料

Doctor of Philosophy in Materials - Electronic and Photonic Materials

加州大学圣塔芭芭拉分校

University of California Santa Barbara

美国

学历文凭
Ph.D.
专业院系
Materials
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国际学生入学条件

Statement of Purpose, Personal History and Diversity Statement, and Resume or CV (submitted in the online application)
Three Letters of Recommendation from referees who can attest to the ability of the student to excel in a rigorous academic program and in creative research (submitted online)
Unofficial transcripts from all post-secondary institutions attended (submitted online)
English Language Exam Scores (if applicable): TOEFL Internet-Based Test (IBT) total score of 100, or TOEFL Paper-Based Test (PBT) total score of 600, or IELTS Overall Band score of 7.
Final/Official transcripts will be required for all applicants who are admitted and have indicated their intent to enroll at UC Santa Barbara by submitting a Statement of Intent to Register (SIR). UC Santa Barbara reserves the right to require official transcripts at any time during the admissions process, and rescind any offer of admission made if discrepancies between uploaded and official transcript(s) are found.

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雅思总分：7
托福网考总分：100
托福笔试总分：600
其他语言考试：Duolingo English Test total score of 120, or higher

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课程简介

电子与光子材料小组在半导体材料的生长，物理特性以及电子和光电器件方面提供广泛的研究活动。由于其优异的电子和光电特性，GaAs，GaN，InP，GaSb和其他III-V材料在高速电子设备，光学计算，光纤，国防和医疗应用中起着至关重要的作用。用于光学数据存储和半导体照明的蓝色激光代表了固态照明和能源电子中心的主要活动。最近，出现了对基于硅和基于非硅的微机电系统的研究重点。分子束外延（MBE）和金属有机化学气相沉积（MOCVD）可以用于外延生长的各种先进设备以及UCSB纳米加工设备的先进加工能力。
The Electronic & Photonic Materials group provides a broad array of research activities in semiconductor materials growth, physical properties, and electronic and optoelectronic devices. Because of their superior electronic and optoelectronic properties, GaAs, GaN, InP, GaSb, and other III-V materials are playing an essential role in high-speed electronic devices, optical computing, fiber optics, defense, and medical applications. Blue lasers for optical data storage and semiconductor lighting represent major activities in the Solid State Lighting and Energy Electronics Center(link is external). More recently, a research emphasis in Si and non-Si-based microelectromechanical systems has emerged. Extensive state-of-the-art facilities are available for epitaxial growth by Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD) along with advanced processing capabilities of the UCSB Nanofabrication Facility

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